RF Design Center
Our RF Component Design lab, is divided into two areas each with its own high technological expertise.
The first part is working on MCM (Multi Circuit Modules), designing PCB based modules like complete Rx receivers and Tx transmitters including the relevant local oscillators (L.O.).
The second group is dedicated to MMIC (Monolithic Microwave Integrated Circuits) designing components and micro circuitry based on Gallium Arsenide (GaAS ), Silicon Germanium (SiGe) and Gallium Nitride (GaN) technology. Those Designs are then used to develop the most cost effective, best integrated , and most stable circuits dedicated to the SIAE MICROELETTRONICA Microwave portfolio production. Modern Microwave units are high precision devices and their perfection comes from the best design, materials, components and precisely controlled production. The RF Components lab develops a wide variety of state-of-the-art components, the most advanced are listed below:
- Low Phase Noise VOCs (Voltage Controlled Oscillators)
- LNCs up to 80GHz (Low Noise down converters for high frequencies)
- VGAs (Variable Gain Amplifiers)
- PA (Power Amplifiers)
- Integrated IF circuits
- Highly integrated UP-converters and VGAs
and the most advanced "All inclusive" SIP (Systems in Package): a complex multi-element unique micro package containing what is needed to arrange a complete Transmitter and/or Receiver. The most advanced SIP covers the highest frequency transceivers usable in Microwave Telecommunications: V-Bands, E-Bands and W-Bands. The microwave SIPs are mounted on a single PCB allowing fast, easy and reliable implementation of a complete ODU.
Both areas make use of up-to date CAD platforms: ADS Agilent for 2D circuit designs and HFSS ANSYS for 3D modeling.
SIAE MICROELETTRONICA maintains the IPR, patents and copyrights of all our designs, however also offers and distributes under licence to third parties companies.